onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 3.5 A, 100 V Enhancement, 8-Pin SOIC FDS89141
- RS stock no.:
- 759-9699
- Mfr. Part No.:
- FDS89141
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 2 units)*
R 88,43
(exc. VAT)
R 101,694
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,326 unit(s) shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | R 44.215 | R 88.43 |
| 20 - 198 | R 43.11 | R 86.22 |
| 200 - 998 | R 41.815 | R 83.63 |
| 1000 - 2498 | R 40.14 | R 80.28 |
| 2500 + | R 38.535 | R 77.07 |
*price indicative
- RS stock no.:
- 759-9699
- Mfr. Part No.:
- FDS89141
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOIC | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 107mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 31W | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Height | 1.5mm | |
| Length | 4mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 107mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 31W | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Height 1.5mm | ||
Length 4mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SOIC FDS9945
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 80 V Enhancement, 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 20 V Enhancement, 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin SOIC