onsemi PowerTrench N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin SOIC FDS86242
- RS stock no.:
- 759-9692
- Mfr. Part No.:
- FDS86242
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (2 units, in packs of 2)*
R 43,70
(exc. VAT)
R 50,26
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 16 March 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | R 21.85 | R 43.70 |
| 20 - 198 | R 21.305 | R 42.61 |
| 200 - 998 | R 20.665 | R 41.33 |
| 1000 - 2498 | R 19.84 | R 39.68 |
| 2500 + | R 19.045 | R 38.09 |
*price indicative
- RS stock no.:
- 759-9692
- Mfr. Part No.:
- FDS86242
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 4.1A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | SOIC | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 126mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 5W | |
| Forward Voltage Vf | 810mV | |
| Typical Gate Charge Qg @ Vgs | 8.9nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 4mm | |
| Width | 5mm | |
| Height | 1.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 4.1A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 126mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 5W | ||
Forward Voltage Vf 810mV | ||
Typical Gate Charge Qg @ Vgs 8.9nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 4mm | ||
Width 5mm | ||
Height 1.5mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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