onsemi PowerTrench Type P-Channel MOSFET, 20 A, 30 V Enhancement, 8-Pin MLP8 FDMC6679AZ
- RS stock no.:
- 759-9522
- Mfr. Part No.:
- FDMC6679AZ
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 tape of 5 units)*
R 146,82
(exc. VAT)
R 168,845
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 20,630 unit(s), ready to ship from another location
Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 45 | R 29.364 | R 146.82 |
| 50 - 745 | R 28.63 | R 143.15 |
| 750 - 1495 | R 27.772 | R 138.86 |
| 1500 - 2995 | R 26.662 | R 133.31 |
| 3000 + | R 25.596 | R 127.98 |
*price indicative
- RS stock no.:
- 759-9522
- Mfr. Part No.:
- FDMC6679AZ
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | PowerTrench | |
| Package Type | MLP8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±25 V | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 41W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.75mm | |
| Width | 3.3 mm | |
| Length | 3.3mm | |
| Standards/Approvals | Lead-Free and RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series PowerTrench | ||
Package Type MLP8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±25 V | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 41W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Height 0.75mm | ||
Width 3.3 mm | ||
Length 3.3mm | ||
Standards/Approvals Lead-Free and RoHS | ||
Automotive Standard No | ||
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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