DiodesZetex Type P-Channel MOSFET, 9.9 A, 40 V Enhancement, 3-Pin TO-252 ZXMP4A16KTC
- RS stock no.:
- 751-5379
- Mfr. Part No.:
- ZXMP4A16KTC
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 73,36
(exc. VAT)
R 84,365
(inc. VAT)
Add 105 units to get free delivery
In Stock
- 40 unit(s) ready to ship from another location
- Plus 390 unit(s) shipping from 20 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 14.672 | R 73.36 |
| 25 - 120 | R 14.306 | R 71.53 |
| 125 - 495 | R 13.876 | R 69.38 |
| 500 - 2495 | R 13.32 | R 66.60 |
| 2500 + | R 12.788 | R 63.94 |
*price indicative
- RS stock no.:
- 751-5379
- Mfr. Part No.:
- ZXMP4A16KTC
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9.9A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 29.6nC | |
| Maximum Power Dissipation Pd | 9.5W | |
| Forward Voltage Vf | -0.89V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 2.39mm | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9.9A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 29.6nC | ||
Maximum Power Dissipation Pd 9.5W | ||
Forward Voltage Vf -0.89V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 2.39mm | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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