DiodesZetex DMN N-Channel MOSFET, 230 mA, 20 V Enhancement, 3-Pin SC-89 DMN26D0UT-7
- RS stock no.:
- 751-4168
- Mfr. Part No.:
- DMN26D0UT-7
- Manufacturer:
- DiodesZetex
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 100 units)*
R 267,70
(exc. VAT)
R 307,90
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,700 unit(s) ready to ship from another location
- Plus 2,600 unit(s) shipping from 12 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 400 | R 2.677 | R 267.70 |
| 500 - 900 | R 2.61 | R 261.00 |
| 1000 - 2900 | R 2.531 | R 253.10 |
| 3000 - 5900 | R 2.43 | R 243.00 |
| 6000 + | R 2.333 | R 233.30 |
*price indicative
- RS stock no.:
- 751-4168
- Mfr. Part No.:
- DMN26D0UT-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 230mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMN | |
| Package Type | SC-89 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 15Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12.9nC | |
| Maximum Power Dissipation Pd | 300mW | |
| Forward Voltage Vf | -1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -10V, +10V | |
| Maximum Operating Temperature | 150°C | |
| Height | 800μm | |
| Width | 850μm | |
| Length | 1.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 230mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMN | ||
Package Type SC-89 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 15Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12.9nC | ||
Maximum Power Dissipation Pd 300mW | ||
Forward Voltage Vf -1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -10V, +10V | ||
Maximum Operating Temperature 150°C | ||
Height 800μm | ||
Width 850μm | ||
Length 1.7mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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