DiodesZetex DMN2041L Type N-Channel MOSFET, 6.4 A, 20 V Enhancement, 3-Pin SOT-23 DMN2041L-7
- RS stock no.:
- 751-4149
- Mfr. Part No.:
- DMN2041L-7
- Manufacturer:
- DiodesZetex
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Bulk discount available
View bulk pricing optionSubtotal (1 pack of 50 units)*
R 101,20
(exc. VAT)
R 116,40
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 450 unit(s) ready to ship from another location
- Plus 1,200 unit(s) shipping from 10 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | R 2.024 | R 101.20 |
| 250 - 450 | R 1.973 | R 98.65 |
| 500 - 1450 | R 1.914 | R 95.70 |
| 1500 - 2950 | R 1.838 | R 91.90 |
| 3000 + | R 1.764 | R 88.20 |
*price indicative
- RS stock no.:
- 751-4149
- Mfr. Part No.:
- DMN2041L-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMN2041L | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 780mW | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 15.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMN2041L | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 780mW | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 15.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 3mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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