Taiwan Semiconductor Type P-Channel MOSFET, 3 A, 30 V Enhancement, 3-Pin SOT-23 TSM2307CX RFG
- RS stock no.:
- 743-6030
- Distrelec Article No.:
- 304-45-913
- Mfr. Part No.:
- TSM2307CX RFG
- Manufacturer:
- Taiwan Semiconductor
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
R 227,63
(exc. VAT)
R 261,78
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- 50 left, ready to ship from another location
- Final 19,200 unit(s) shipping from 15 October 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 9.105 | R 227.63 |
| 50 - 100 | R 8.878 | R 221.95 |
| 125 - 225 | R 8.611 | R 215.28 |
| 250 + | R 8.267 | R 206.68 |
*price indicative
- RS stock no.:
- 743-6030
- Distrelec Article No.:
- 304-45-913
- Mfr. Part No.:
- TSM2307CX RFG
- Manufacturer:
- Taiwan Semiconductor
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 140mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 1.25W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.7mm | |
| Length | 3.1mm | |
| Standards/Approvals | No | |
| Height | 1.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 140mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 1.25W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 1.7mm | ||
Length 3.1mm | ||
Standards/Approvals No | ||
Height 1.2mm | ||
Automotive Standard No | ||
P-Channel Power MOSFET, Taiwan Semiconductor
MOSFET Transistors, Taiwan Semiconductor
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