onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET, 2.5 A, 30 V Enhancement, 6-Pin SOT-23 FDC6333C

RS stock no.:: 739-0164
Mfr. Part No.:: FDC6333C
Manufacturer:: onsemi

onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET, 2.5 A, 30 V Enhancement, 6-Pin SOT-23 FDC6333C

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Bulk discount available

Subtotal (1 pack of 5 units)*

R 71,23

(exc. VAT)

R 81,915

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

10 unit(s) ready to ship from another location
Plus 1,720 unit(s) shipping from 05 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 20	R 14.246	R 71.23
25 - 95	R 13.89	R 69.45
100 - 245	R 13.474	R 67.37
250 - 495	R 12.936	R 64.68
500 +	R 12.418	R 62.09

*price indicative

RS stock no.:: 739-0164
Mfr. Part No.:: FDC6333C
Manufacturer:: onsemi

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type P, Type N
	Maximum Continuous Drain Current Id	2.5A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-23
	Series	PowerTrench
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	220mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	25 V
	Forward Voltage Vf	0.8V
	Typical Gate Charge Qg @ Vgs	4.7nC
	Maximum Power Dissipation Pd	960mW
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Length	3mm
	Width	1.7 mm
	Height	1mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type P, Type N
	Maximum Continuous Drain Current Id 2.5A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-23
	Series PowerTrench
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 220mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 25 V
	Forward Voltage Vf 0.8V
	Typical Gate Charge Qg @ Vgs 4.7nC
	Maximum Power Dissipation Pd 960mW
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Transistor Configuration Isolated
	Length 3mm
	Width 1.7 mm
	Height 1mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard No

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET, 2.5 A, 30 V Enhancement, 6-Pin SOT-23 FDC6333C

FREE delivery for orders over R 1,500.00

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

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