DiodesZetex ZXMP6A18K Type P-Channel MOSFET, 10.4 A, 60 V Enhancement, 3-Pin TO-252 ZXMP6A18KTC
- RS stock no.:
- 738-5178
- Mfr. Part No.:
- ZXMP6A18KTC
- Manufacturer:
- DiodesZetex
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Bulk discount available
Subtotal (1 pack of 2 units)*
R 31,70
(exc. VAT)
R 36,46
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 36 unit(s) ready to ship from another location
- Plus 1,522 unit(s) shipping from 07 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 15.85 | R 31.70 |
| 10 - 18 | R 15.455 | R 30.91 |
| 20 - 48 | R 14.99 | R 29.98 |
| 50 - 98 | R 14.39 | R 28.78 |
| 100 + | R 13.815 | R 27.63 |
*price indicative
- RS stock no.:
- 738-5178
- Mfr. Part No.:
- ZXMP6A18KTC
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 10.4A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | ZXMP6A18K | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Forward Voltage Vf | -0.95V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 10.1W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Height | 2.39mm | |
| Standards/Approvals | No | |
| Width | 7.67 mm | |
| Automotive Standard | AEC-Q200, AEC-Q104, AEC-Q100, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 10.4A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series ZXMP6A18K | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Forward Voltage Vf -0.95V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 10.1W | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Height 2.39mm | ||
Standards/Approvals No | ||
Width 7.67 mm | ||
Automotive Standard AEC-Q200, AEC-Q104, AEC-Q100, AEC-Q101 | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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