N-Channel MOSFET, 74 A, 600 V, 3-Pin Max247 STMicroelectronics STY80NM60N
- RS stock no.:
- 714-6803P
- Mfr. Part No.:
- STY80NM60N
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal 10 units (supplied in a tube)*
R 2 090,90
(exc. VAT)
R 2 404,50
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit |
|---|---|
| 10 - 19 | R 209.09 |
| 20 - 49 | R 202.82 |
| 50 - 99 | R 194.70 |
| 100 + | R 186.92 |
*price indicative
- RS stock no.:
- 714-6803P
- Mfr. Part No.:
- STY80NM60N
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 74 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | Max247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 35 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 447 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 15.9mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 360 nC @ 10 V | |
| Width | 5.3mm | |
| Height | 20.3mm | |
| Minimum Operating Temperature | -55 °C | |
| Series | MDmesh | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 74 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type Max247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 35 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 447 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Maximum Operating Temperature +150 °C | ||
Length 15.9mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 360 nC @ 10 V | ||
Width 5.3mm | ||
Height 20.3mm | ||
Minimum Operating Temperature -55 °C | ||
Series MDmesh | ||