STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 250 mA, 800 V Enhancement, 4-Pin SOT-223 STN1NK80Z
- RS stock no.:
- 714-1076
- Distrelec Article No.:
- 304-43-898
- Mfr. Part No.:
- STN1NK80Z
- Manufacturer:
- STMicroelectronics
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 181,23
(exc. VAT)
R 208,41
(inc. VAT)
FREE delivery for orders over R 1,500.00
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- 1,400 left, ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 18.123 | R 181.23 |
| 20 - 40 | R 17.67 | R 176.70 |
| 50 - 90 | R 17.14 | R 171.40 |
| 100 - 190 | R 16.454 | R 164.54 |
| 200 + | R 15.796 | R 157.96 |
*price indicative
- RS stock no.:
- 714-1076
- Distrelec Article No.:
- 304-43-898
- Mfr. Part No.:
- STN1NK80Z
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 250mA | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | MDmesh, SuperMESH | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 16Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7.7nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.5mm | |
| Width | 3.5mm | |
| Height | 1.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 250mA | ||
Maximum Drain Source Voltage Vds 800V | ||
Series MDmesh, SuperMESH | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 16Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 2.5W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7.7nC | ||
Maximum Operating Temperature 150°C | ||
Length 6.5mm | ||
Width 3.5mm | ||
Height 1.8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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