Vishay TrenchFET Type P-Channel MOSFET, 2.7 A, 30 V Enhancement, 3-Pin SOT-23 SI2303CDS-T1-GE3
- RS stock no.:
- 710-3241
- Mfr. Part No.:
- SI2303CDS-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 pack of 20 units)*
R 157,16
(exc. VAT)
R 180,74
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 11,160 unit(s) shipping from 12 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 7.858 | R 157.16 |
| 100 - 180 | R 7.662 | R 153.24 |
| 200 - 380 | R 7.432 | R 148.64 |
| 400 - 980 | R 7.134 | R 142.68 |
| 1000 + | R 6.849 | R 136.98 |
*price indicative
- RS stock no.:
- 710-3241
- Mfr. Part No.:
- SI2303CDS-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2.7A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.33Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4nC | |
| Maximum Power Dissipation Pd | 2.3W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Width | 1.4 mm | |
| Length | 3.04mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2.7A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.33Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4nC | ||
Maximum Power Dissipation Pd 2.3W | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Width 1.4 mm | ||
Length 3.04mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Automotive Standard No | ||
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
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- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 80 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 80 V Enhancement, 3-Pin SOT-23