DiodesZetex N-Channel MOSFET, 3.5 A, 30 V Enhancement, 3-Pin SOT-23 ZXMN3B14FTA
- RS stock no.:
- 708-2605
- Mfr. Part No.:
- ZXMN3B14FTA
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 131,83
(exc. VAT)
R 151,60
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 60 unit(s) ready to ship from another location
- Plus 1,740 unit(s) shipping from 12 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 13.183 | R 131.83 |
| 50 - 90 | R 12.853 | R 128.53 |
| 100 - 190 | R 12.467 | R 124.67 |
| 200 - 490 | R 11.968 | R 119.68 |
| 500 + | R 11.489 | R 114.89 |
*price indicative
- RS stock no.:
- 708-2605
- Mfr. Part No.:
- ZXMN3B14FTA
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 140mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.5W | |
| Maximum Gate Source Voltage Vgs | -12V, +12V | |
| Forward Voltage Vf | 950mV | |
| Typical Gate Charge Qg @ Vgs | 6.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Length | 3.05mm | |
| Standards/Approvals | No | |
| Width | 1.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 140mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.5W | ||
Maximum Gate Source Voltage Vgs -12V, +12V | ||
Forward Voltage Vf 950mV | ||
Typical Gate Charge Qg @ Vgs 6.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Length 3.05mm | ||
Standards/Approvals No | ||
Width 1.4mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
- DiodesZetex Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- DiodesZetex Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- DiodesZetex Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- DiodesZetex Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- DiodesZetex Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- DiodesZetex Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- DiodesZetex Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- DiodesZetex Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23