DiodesZetex Type N-Channel MOSFET, 4.6 A, 30 V Enhancement, 3-Pin SOT-23 ZXMN3F30FHTA
- RS stock no.:
- 708-2539
- Mfr. Part No.:
- ZXMN3F30FHTA
- Manufacturer:
- DiodesZetex
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Bulk discount available
Subtotal (1 pack of 25 units)*
R 125,45
(exc. VAT)
R 144,275
(inc. VAT)
Add 325 units to get free delivery
Stocked by manufacturer
- Ready to ship from 24 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | R 5.018 | R 125.45 |
| 125 - 225 | R 4.893 | R 122.33 |
| 250 - 475 | R 4.746 | R 118.65 |
| 500 - 1225 | R 4.556 | R 113.90 |
| 1250 + | R 4.374 | R 109.35 |
*price indicative
- RS stock no.:
- 708-2539
- Mfr. Part No.:
- ZXMN3F30FHTA
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 7.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.4W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Height | 1.12mm | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 7.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.4W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Height 1.12mm | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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