Infineon HEXFET Type N-Channel MOSFET, 97 A, 100 V Enhancement, 3-Pin TO-220 IRFB4410ZPBF

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R 51,65

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R 59,398

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Units
Per unit
Per Pack*
2 - 8R 25.825R 51.65
10 - 18R 25.18R 50.36
20 - 38R 24.425R 48.85
40 - 98R 23.45R 46.90
100 +R 22.51R 45.02

*price indicative

Packaging Options:
RS stock no.:
688-6954
Mfr. Part No.:
IRFB4410ZPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

97A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

9mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

230W

Typical Gate Charge Qg @ Vgs

83nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

10.66mm

Standards/Approvals

No

Width

4.82 mm

Height

9.02mm

Automotive Standard

No

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