Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-220 IRF3205ZPBF

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Subtotal (1 pack of 2 units)*

R 58,35

(exc. VAT)

R 67,102

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 29.175R 58.35
10 - 18R 28.445R 56.89
20 - 38R 27.59R 55.18
40 - 98R 26.485R 52.97
100 +R 25.425R 50.85

*price indicative

Packaging Options:
RS stock no.:
688-6829
Mfr. Part No.:
IRF3205ZPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

7mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

76nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

170W

Maximum Operating Temperature

175°C

Width

4.69 mm

Height

8.77mm

Length

10.54mm

Standards/Approvals

No

Automotive Standard

No

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