STMicroelectronics MDmesh, SuperMESH Type N-Channel MOSFET, 5.2 A, 800 V Enhancement, 3-Pin TO-220 STP7NK80Z
- RS stock no.:
- 687-5346
- Distrelec Article No.:
- 304-35-976
- Mfr. Part No.:
- STP7NK80Z
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 210,66
(exc. VAT)
R 242,26
(inc. VAT)
Add 40 units to get free delivery
In Stock
- 1,885 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 42.132 | R 210.66 |
| 25 - 45 | R 41.078 | R 205.39 |
| 50 - 120 | R 39.846 | R 199.23 |
| 125 - 245 | R 38.252 | R 191.26 |
| 250 + | R 36.722 | R 183.61 |
*price indicative
- RS stock no.:
- 687-5346
- Distrelec Article No.:
- 304-35-976
- Mfr. Part No.:
- STP7NK80Z
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.2A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | MDmesh, SuperMESH | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.8Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 4.6 mm | |
| Height | 9.15mm | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.2A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series MDmesh, SuperMESH | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.8Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 4.6 mm | ||
Height 9.15mm | ||
Length 10.4mm | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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