onsemi QFET N-Channel MOSFET, 6.6 A, 800 V, 3-Pin TO-220F FQPF7N80C
- RS stock no.:
- 671-5310
- Mfr. Part No.:
- FQPF7N80C
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 226,02
(exc. VAT)
R 259,925
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 45.204 | R 226.02 |
| 25 - 95 | R 44.074 | R 220.37 |
| 100 - 245 | R 42.752 | R 213.76 |
| 250 - 495 | R 41.042 | R 205.21 |
| 500 + | R 39.40 | R 197.00 |
*price indicative
- RS stock no.:
- 671-5310
- Mfr. Part No.:
- FQPF7N80C
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 6.6 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | TO-220F | |
| Series | QFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.9 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 56 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 27 nC @ 10 V | |
| Width | 4.7mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.16mm | |
| Height | 9.19mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 6.6 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type TO-220F | ||
Series QFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.9 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 56 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 27 nC @ 10 V | ||
Width 4.7mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 10.16mm | ||
Height 9.19mm | ||
Minimum Operating Temperature -55 °C | ||
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