onsemi QFET Type N-Channel MOSFET, 20 A, 60 V Enhancement, 3-Pin TO-220 FQP20N06
- RS stock no.:
- 671-5051
- Mfr. Part No.:
- FQP20N06
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 113,28
(exc. VAT)
R 130,27
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 5 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 22.656 | R 113.28 |
| 25 - 95 | R 22.09 | R 110.45 |
| 100 - 245 | R 21.428 | R 107.14 |
| 250 - 495 | R 20.57 | R 102.85 |
| 500 + | R 19.748 | R 98.74 |
*price indicative
- RS stock no.:
- 671-5051
- Mfr. Part No.:
- FQP20N06
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220 | |
| Series | QFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 53W | |
| Typical Gate Charge Qg @ Vgs | 11.5nC | |
| Maximum Gate Source Voltage Vgs | ±25 V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.1mm | |
| Standards/Approvals | No | |
| Width | 4.7 mm | |
| Height | 9.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220 | ||
Series QFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 53W | ||
Typical Gate Charge Qg @ Vgs 11.5nC | ||
Maximum Gate Source Voltage Vgs ±25 V | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Length 10.1mm | ||
Standards/Approvals No | ||
Width 4.7 mm | ||
Height 9.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
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Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
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ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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