onsemi QFET Type N-Channel MOSFET, 10.5 A, 400 V Enhancement, 3-Pin TO-220

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Subtotal (1 pack of 5 units)*

R 114,72

(exc. VAT)

R 131,93

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 20R 22.944R 114.72
25 - 95R 22.37R 111.85
100 - 245R 21.698R 108.49
250 - 495R 20.83R 104.15
500 +R 19.996R 99.98

*price indicative

RS stock no.:
671-5004
Mfr. Part No.:
FQP11N40C
Manufacturer:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10.5A

Maximum Drain Source Voltage Vds

400V

Series

QFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

530mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.4V

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

135W

Typical Gate Charge Qg @ Vgs

28nC

Maximum Operating Temperature

150°C

Width

4.7 mm

Length

10.1mm

Height

9.4mm

Standards/Approvals

No

Automotive Standard

No

QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.

They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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