onsemi PowerTrench Type N-Channel MOSFET, 11 A, 30 V Enhancement, 8-Pin SOIC FDS6690A
- RS stock no.:
- 671-0624
- Mfr. Part No.:
- FDS6690A
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 81,73
(exc. VAT)
R 93,99
(inc. VAT)
Add 95 units to get free delivery
In Stock
- Plus 2,530 unit(s) shipping from 16 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 16.346 | R 81.73 |
| 25 - 95 | R 15.938 | R 79.69 |
| 100 - 245 | R 15.46 | R 77.30 |
| 250 - 495 | R 14.842 | R 74.21 |
| 500 + | R 14.248 | R 71.24 |
*price indicative
- RS stock no.:
- 671-0624
- Mfr. Part No.:
- FDS6690A
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.7V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.7V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5mm | ||
Height 1.5mm | ||
Width 4 mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi PowerTrench Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC FDS6675BZ
- onsemi PowerTrench Type N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type N-Channel MOSFET 80 V Enhancement, 8-Pin SOIC