onsemi PowerTrench Type P-Channel MOSFET, 11 A, 30 V Enhancement, 8-Pin SOIC FDS6675BZ

RS stock no.:: 671-0598
Mfr. Part No.:: FDS6675BZ
Manufacturer:: onsemi

onsemi PowerTrench Type P-Channel MOSFET, 11 A, 30 V Enhancement, 8-Pin SOIC FDS6675BZ

Image representative of range

Bulk discount available

Subtotal (1 pack of 5 units)*

R 80,53

(exc. VAT)

R 92,61

(inc. VAT)

FREE delivery for orders over R 1,500.00

Supply shortage

15 left, ready to ship from another location
Plus 1,265 left, shipping from 07 January 2026

Our current stock is limited and our suppliers are expecting shortages.

Units	Per unit	Per Pack*
5 - 20	R 16.106	R 80.53
25 - 95	R 15.704	R 78.52
100 - 245	R 15.232	R 76.16
250 - 495	R 14.622	R 73.11
500 +	R 14.038	R 70.19

*price indicative

RS stock no.:: 671-0598
Mfr. Part No.:: FDS6675BZ
Manufacturer:: onsemi

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	11A
	Maximum Drain Source Voltage Vds	30V
	Series	PowerTrench
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	13mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	44nC
	Maximum Gate Source Voltage Vgs	25 V
	Forward Voltage Vf	-1.2V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2.5W
	Maximum Operating Temperature	150°C
	Height	1.5mm
	Width	4 mm
	Standards/Approvals	No
	Length	5mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 11A
	Maximum Drain Source Voltage Vds 30V
	Series PowerTrench
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 13mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 44nC
	Maximum Gate Source Voltage Vgs 25 V
	Forward Voltage Vf -1.2V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2.5W
	Maximum Operating Temperature 150°C
	Height 1.5mm
	Width 4 mm
	Standards/Approvals No
	Length 5mm
	Automotive Standard No

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi PowerTrench Type P-Channel MOSFET, 11 A, 30 V Enhancement, 8-Pin SOIC FDS6675BZ

FREE delivery for orders over R 1,500.00

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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