onsemi PowerTrench Type P-Channel MOSFET, 13 A, 30 V Enhancement, 8-Pin SOIC FDS6679AZ

RS stock no.:: 671-0602
Mfr. Part No.:: FDS6679AZ
Manufacturer:: onsemi

onsemi PowerTrench Type P-Channel MOSFET, 13 A, 30 V Enhancement, 8-Pin SOIC FDS6679AZ

Image representative of range

Bulk discount available

Subtotal (1 pack of 5 units)*

R 128,19

(exc. VAT)

R 147,42

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

1,595 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 20	R 25.638	R 128.19
25 - 95	R 24.998	R 124.99
100 - 245	R 24.248	R 121.24
250 - 495	R 23.278	R 116.39
500 +	R 22.346	R 111.73

*price indicative

RS stock no.:: 671-0602
Mfr. Part No.:: FDS6679AZ
Manufacturer:: onsemi

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	30V
	Series	PowerTrench
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	9mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.2V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	68nC
	Maximum Power Dissipation Pd	2.5W
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Operating Temperature	150°C
	Length	5mm
	Standards/Approvals	No
	Height	1.5mm
	Width	4 mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 30V
	Series PowerTrench
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 9mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.2V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 68nC
	Maximum Power Dissipation Pd 2.5W
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Operating Temperature 150°C
	Length 5mm
	Standards/Approvals No
	Height 1.5mm
	Width 4 mm
	Automotive Standard No

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi PowerTrench Type P-Channel MOSFET, 13 A, 30 V Enhancement, 8-Pin SOIC FDS6679AZ

FREE delivery for orders over R 1,500.00

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

Related links