Vishay IRF710 Type N-Channel Power MOSFET, 1.2 A, 400 V Enhancement, 3-Pin TO-220AB
- RS stock no.:
- 543-0074
- Distrelec Article No.:
- 171-15-165
- Mfr. Part No.:
- IRF710PBF
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
R 31,65
(exc. VAT)
R 36,40
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 203 unit(s) ready to ship from another location
- Plus 1,230 unit(s) shipping from 29 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 24 | R 31.65 |
| 25 - 99 | R 30.86 |
| 100 - 249 | R 29.93 |
| 250 - 499 | R 28.73 |
| 500 + | R 27.58 |
*price indicative
- RS stock no.:
- 543-0074
- Distrelec Article No.:
- 171-15-165
- Mfr. Part No.:
- IRF710PBF
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 1.2A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-220AB | |
| Series | IRF710 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.6Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 36W | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.7mm | |
| Standards/Approvals | RoHS | |
| Height | 9.01mm | |
| Length | 10.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 1.2A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-220AB | ||
Series IRF710 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.6Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 36W | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 4.7mm | ||
Standards/Approvals RoHS | ||
Height 9.01mm | ||
Length 10.41mm | ||
Automotive Standard No | ||
Vishay IRF710 Series Power MOSFET, 400V Maximum Drain Source Voltage, 1.2A Maximum Continuous Drain Current - IRF710PBF
This power MOSFET is a high-voltage N-channel enhancement device designed for switching and power-management roles in industrial and electronic systems. It operates over a wide temperature span and is packaged for through-hole mounting, offering a compact, serviceable option for boards and assemblies that require discrete transistor switching at elevated voltages.
Features and Benefits:
• 400V drain-source rating enables high-voltage switching applications • 3.6Ω Rds(on) reduces conduction losses in low-current circuits • 1.2A continuous drain current supports modest load currents • 17nC typical gate charge allows predictable switching control • 36W power dissipation handles intermittent thermal loading • 20V gate-source limit permits common gate-drive voltages
Applications
• Suitable for industrial relay and contactor driver stages • Ideal for high-voltage laboratory power supplies • Used for mains-side snubber and bleed resistor switching • Can be used for motor control in low-current ancillary circuits
What mounting style does it use and why is that useful?
It is a through-hole device in a TO-220AB package which simplifies heat-sinking and replacement on serviceable assemblies.
What ambient temperature range can it tolerate during operation?
The device is specified for operation from -55°C up to 150°C, allowing use in environments with wide thermal variation.
How does gate charge affect driver selection?
With a typical gate charge of 17nC, drivers must supply sufficient Peak current for desired switching speeds while managing gate-drive energy.
What is the maximum safe gate voltage to apply?
The maximum gate-source voltage is 20V, so gate-drive circuits should limit control voltages accordingly to avoid damage.
Related links
- Vishay IRF Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-220 IRF710PBF
- Vishay IRF Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-220
- Vishay IRF Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-220 IRF740PBF
- Vishay IRF Type N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-220AB IRF720PBF
- Vishay IRF Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220
- Vishay IRF Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Vishay IRF Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Vishay IRF Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220