Vishay IRFD Type N-Channel MOSFET, 1 A, 100 V Enhancement, 4-Pin HVMDIP IRFD110PBF

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Subtotal (1 unit)*

R 19,78

(exc. VAT)

R 22,75

(inc. VAT)

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Units
Per unit
1 - 24R 19.78
25 - 99R 19.29
100 - 249R 18.71
250 - 499R 17.96
500 +R 17.24

*price indicative

RS stock no.:
541-1039
Mfr. Part No.:
IRFD110PBF
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1A

Maximum Drain Source Voltage Vds

100V

Series

IRFD

Package Type

HVMDIP

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

540mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.3W

Forward Voltage Vf

2.5V

Typical Gate Charge Qg @ Vgs

8.3nC

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

175°C

Width

6.29mm

Standards/Approvals

No

Height

3.37mm

Length

5mm

Automotive Standard

No

FEATURES

• TrenchFET® power MOSFET

• Package with low thermal resistance

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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