STMicroelectronics MDmesh, SuperMESH Type N-Channel MOSFET, 10 A, 600 V Enhancement, 3-Pin TO-247
- RS stock no.:
- 486-3079
- Mfr. Part No.:
- STW10NK60Z
- Manufacturer:
- STMicroelectronics
Image representative of range
Bulk discount available
Subtotal (1 unit)*
R 66,93
(exc. VAT)
R 76,97
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 669 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | R 66.93 |
| 10 - 49 | R 65.26 |
| 50 - 149 | R 63.30 |
| 150 - 499 | R 60.77 |
| 500 + | R 58.34 |
*price indicative
- RS stock no.:
- 486-3079
- Mfr. Part No.:
- STW10NK60Z
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | MDmesh, SuperMESH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 750mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 156W | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.75mm | |
| Standards/Approvals | No | |
| Height | 20.15mm | |
| Width | 5.15 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series MDmesh, SuperMESH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 750mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 156W | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 15.75mm | ||
Standards/Approvals No | ||
Height 20.15mm | ||
Width 5.15 mm | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 STW10NK60Z
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD12N60DM6
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 STP10NK60ZFP
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 STWA75N60M6
- STMicroelectronics Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247