STMicroelectronics MDmesh, SuperMESH Type N-Channel MOSFET, 3 A, 800 V Enhancement, 3-Pin TO-220 STP4NK80Z
- RS stock no.:
- 485-7692
- Mfr. Part No.:
- STP4NK80Z
- Manufacturer:
- STMicroelectronics
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Subtotal (1 pack of 5 units)*
R 214,21
(exc. VAT)
R 246,34
(inc. VAT)
Add 40 units to get free delivery
In Stock
- Plus 45 unit(s) shipping from 13 February 2026
- Plus 100 unit(s) shipping from 18 February 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 42.842 | R 214.21 |
| 25 - 95 | R 41.77 | R 208.85 |
| 100 - 245 | R 40.516 | R 202.58 |
| 250 - 495 | R 38.896 | R 194.48 |
| 500 + | R 37.34 | R 186.70 |
*price indicative
- RS stock no.:
- 485-7692
- Mfr. Part No.:
- STP4NK80Z
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Series | MDmesh, SuperMESH | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 80W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 22.5nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.15mm | |
| Length | 10.4mm | |
| Width | 4.6 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Series MDmesh, SuperMESH | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 80W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 22.5nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Height 9.15mm | ||
Length 10.4mm | ||
Width 4.6 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
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