STMicroelectronics MDmesh, SuperMESH Type N-Channel MOSFET, 4 A, 600 V Enhancement, 3-Pin TO-220
- RS stock no.:
- 485-7686
- Mfr. Part No.:
- STP4NK60Z
- Manufacturer:
- STMicroelectronics
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Bulk discount available
View bulk pricing optionSubtotal (1 pack of 5 units)*
R 209,26
(exc. VAT)
R 240,65
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 15 unit(s) ready to ship from another location
- Plus 2,430 unit(s) shipping from 08 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 41.852 | R 209.26 |
| 25 - 95 | R 40.806 | R 204.03 |
| 100 - 245 | R 39.582 | R 197.91 |
| 250 - 495 | R 37.998 | R 189.99 |
| 500 + | R 36.478 | R 182.39 |
*price indicative
- RS stock no.:
- 485-7686
- Mfr. Part No.:
- STP4NK60Z
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | MDmesh, SuperMESH | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 70W | |
| Typical Gate Charge Qg @ Vgs | 18.8nC | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Height | 9.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series MDmesh, SuperMESH | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 70W | ||
Typical Gate Charge Qg @ Vgs 18.8nC | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Height 9.15mm | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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