Vishay SQJ740EP 2 Type N-Channel MOSFET, 123 A, 40 V Enhancement, 4-Pin SO-8L
- RS stock no.:
- 280-0020
- Mfr. Part No.:
- SQJ740EP-T1_GE3
- Manufacturer:
- Vishay
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Subtotal (1 reel of 3000 units)*
R 48 387,00
(exc. VAT)
R 55 644,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 28 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | R 16.129 | R 48,387.00 |
*price indicative
- RS stock no.:
- 280-0020
- Mfr. Part No.:
- SQJ740EP-T1_GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 123A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8L | |
| Series | SQJ740EP | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 40 V | |
| Forward Voltage Vf | 0V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | 100 percent Rg and UIS tested, RoHS, AEC-Q101 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 123A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8L | ||
Series SQJ740EP | ||
Mount Type Surface | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 40 V | ||
Forward Voltage Vf 0V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals 100 percent Rg and UIS tested, RoHS, AEC-Q101 | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay Automotive MOSFET is a Dual N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
AEC-Q101 qualified
Fully lead (Pb)-free device
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