Vishay SIHR Type N-Channel MOSFET, 51 A, 600 V Enhancement, 8-Pin 8x8LR SIHR080N60E-T1-GE3

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Subtotal (1 unit)*

R 136,37

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R 156,83

(inc. VAT)

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Per unit
1 - 49R 136.37
50 - 99R 132.96
100 - 249R 128.97
250 - 999R 123.81
1000 +R 118.86

*price indicative

Packaging Options:
RS stock no.:
279-9929
Mfr. Part No.:
SIHR080N60E-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

51A

Maximum Drain Source Voltage Vds

600V

Package Type

8x8LR

Series

SIHR

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.084Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±30 V

Typical Gate Charge Qg @ Vgs

63nC

Maximum Power Dissipation Pd

500W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

8mm

Automotive Standard

No

The Vishay MOSFET is a E series power MOSFET and the transistor in it is made up of material known as silicon.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance

Avalanche energy rated

Reduced switching and conduction losses

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