Vishay Type N-Channel MOSFET, 430 A, 80 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ184E-T1_GE3

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Subtotal (1 pack of 2 units)*

R 149,86

(exc. VAT)

R 172,34

(inc. VAT)

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Last RS stock
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Units
Per unit
Per Pack*
2 - 48R 74.93R 149.86
50 - 98R 73.055R 146.11
100 - 248R 70.865R 141.73
250 - 998R 68.03R 136.06
1000 +R 65.31R 130.62

*price indicative

Packaging Options:
RS stock no.:
252-0312
Mfr. Part No.:
SQJQ184E-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

430A

Maximum Drain Source Voltage Vds

80V

Package Type

PowerPAK (8x8LR)

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0014mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

214W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

43nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.15mm

Width

4.9 mm

Automotive Standard

AEC-Q101

The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.

TrenchFET power MOSFET

AEC-Q101 qualified

100 % Rg and UIS tested

Thin 1.9 mm height


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