Vishay SIHP Type N-Channel MOSFET, 47 A, 650 V Enhancement, 3-Pin TO-220AB SIHP054N65E-GE3

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Subtotal (1 unit)*

R 145,21

(exc. VAT)

R 166,99

(inc. VAT)

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1 - 9R 145.21
10 - 24R 141.58
25 - 99R 137.33
100 +R 131.84

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Packaging Options:
RS stock no.:
279-9922
Mfr. Part No.:
SIHP054N65E-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

47A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220AB

Series

SIHP

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.058Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

312W

Typical Gate Charge Qg @ Vgs

108nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a E series power MOSFET and the transistor in it is made up of material known as silicon.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance

Avalanche energy rated

Reduced switching and conduction losses

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