Vishay SIHK Type N-Channel MOSFET, 18 A, 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK155N60EF-T1GE3

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Subtotal (1 unit)*

R 106,58

(exc. VAT)

R 122,57

(inc. VAT)

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Units
Per unit
1 - 49R 106.58
50 - 99R 103.92
100 - 249R 100.80
250 - 999R 96.77
1000 +R 92.90

*price indicative

Packaging Options:
RS stock no.:
279-9918
Mfr. Part No.:
SIHK155N60EF-T1GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

600V

Series

SIHK

Package Type

PowerPAK 10 x 12

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.159Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

156W

Typical Gate Charge Qg @ Vgs

38nC

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

9.9mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a E series power MOSFET with Fast body diode and the transistor in it is made up of material known as silicon.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance

Avalanche energy rated

Reduced switching and conduction losses

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