STMicroelectronics N-Channel, 25 A, 750 V Enhancement, 4-Pin PowerFLAT (5 x 6) HV SGT65R65AL
- RS stock no.:
- 275-1318P
- Mfr. Part No.:
- SGT65R65AL
- Manufacturer:
- STMicroelectronics
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- RS stock no.:
- 275-1318P
- Mfr. Part No.:
- SGT65R65AL
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current (Id) | 25 A | |
| Maximum Drain Source Voltage (Vds) | 750 V | |
| Channel Mode | Enhancement | |
| Pin Count | 4 | |
| Package Type | PowerFLAT (5 x 6) HV | |
| Mount Type | Surface | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current (Id) 25 A | ||
Maximum Drain Source Voltage (Vds) 750 V | ||
Channel Mode Enhancement | ||
Pin Count 4 | ||
Package Type PowerFLAT (5 x 6) HV | ||
Mount Type Surface | ||
- COO (Country of Origin):
- CN
The STMicroelectronics e-mode powerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.
Very high switching speed
High power management capability
Extremely low capacitances
Kelvin source pad for optimum gate driving
Zero reverse recovery charge