Infineon HEXFET Type N-Channel MOSFET, 173 A, 60 V Enhancement, 3-Pin TO-263
- RS stock no.:
- 273-3030
- Mfr. Part No.:
- IRFS7537TRLPBF
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 173,34
(exc. VAT)
R 199,34
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 785 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 34.668 | R 173.34 |
| 25 - 45 | R 33.802 | R 169.01 |
| 50 - 95 | R 32.788 | R 163.94 |
| 100 - 245 | R 31.476 | R 157.38 |
| 250 + | R 30.216 | R 151.08 |
*price indicative
- RS stock no.:
- 273-3030
- Mfr. Part No.:
- IRFS7537TRLPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 173A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.30mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 230W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 142nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 173A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.30mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 230W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 142nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
The Infineon single N-channel HEXFET power MOSFET in a D2-Pak package is optimized for broadest availability from distribution partners.
Product qualification according to JEDEC standard
Softer body diode compared to previous silicon generation
Industry standard surface-mount power package
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