Infineon IPN Type N-Channel MOSFET, 3.6 A, 650 V Enhancement, 3-Pin PG-SOT223 IPN60R1K5PFD7SATMA1

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Subtotal (1 reel of 3000 units)*

R 14 334,00

(exc. VAT)

R 16 485,00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +R 4.778R 14,334.00

*price indicative

RS stock no.:
273-3015
Mfr. Part No.:
IPN60R1K5PFD7SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.6A

Maximum Drain Source Voltage Vds

650V

Package Type

PG-SOT223

Series

IPN

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.5Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

6W

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

4.6nC

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC Standard

Automotive Standard

No

The Infineon 600V cool MOS PFD7 super junction MOSFET complements the cool MOS 7 offering for consumer applications.

BOM cost reduction and easy manufacturing

Robustness and reliability

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