Infineon IPB057N06N Type N-Channel MOSFET, 45 A, 60 V Enhancement, 3-Pin PG-TO263-3
- RS stock no.:
- 273-2998
- Mfr. Part No.:
- IPB057N06NATMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 124,97
(exc. VAT)
R 143,715
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 950 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 24.994 | R 124.97 |
| 50 - 95 | R 24.37 | R 121.85 |
| 100 - 245 | R 23.638 | R 118.19 |
| 250 - 495 | R 22.692 | R 113.46 |
| 500 + | R 21.784 | R 108.92 |
*price indicative
- RS stock no.:
- 273-2998
- Mfr. Part No.:
- IPB057N06NATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-TO263-3 | |
| Series | IPB057N06N | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -5°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Operating Temperature | 175°C | |
| Width | 40 mm | |
| Length | 40mm | |
| Height | 1.5mm | |
| Standards/Approvals | JEDEC 1, IEC61249-2-21 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-TO263-3 | ||
Series IPB057N06N | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -5°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Operating Temperature 175°C | ||
Width 40 mm | ||
Length 40mm | ||
Height 1.5mm | ||
Standards/Approvals JEDEC 1, IEC61249-2-21 | ||
Automotive Standard No | ||
The Infineon power MOSFET is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial appl
Highest system efficiency
Less paralleling required
Increased power density
System cost reduction
Related links
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