Infineon OptiMOS-TM6 Type N-Channel MOSFET, 39 A, 200 V Enhancement, 3-Pin PG-TO263-3 IPB339N20NM6ATMA1
- RS stock no.:
- 349-401
- Mfr. Part No.:
- IPB339N20NM6ATMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
R 344,77
(exc. VAT)
R 396,485
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 1,000 left, ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 68.954 | R 344.77 |
| 50 - 95 | R 67.23 | R 336.15 |
| 100 + | R 65.214 | R 326.07 |
*price indicative
- RS stock no.:
- 349-401
- Mfr. Part No.:
- IPB339N20NM6ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 39A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | PG-TO263-3 | |
| Series | OptiMOS-TM6 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 15.9nC | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 39A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type PG-TO263-3 | ||
Series OptiMOS-TM6 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 15.9nC | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor, 200 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It offers very low on resistance (RDS(on)), ensuring minimal conduction losses. With an excellent gate charge x RDS(on) product (FOM), it delivers superior switching performance. This MOSFET also features very low reverse recovery charge (Qrr), enhancing overall efficiency.
Pb free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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