Infineon ISA Type N-Channel MOSFET, 248 A, 100 V Enhancement, 5-Pin sTOLL
- RS stock no.:
- 273-2822
- Mfr. Part No.:
- IST026N10NM5AUMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 124,18
(exc. VAT)
R 142,80
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 100 unit(s) shipping from 05 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | R 62.09 | R 124.18 |
| 50 - 98 | R 60.54 | R 121.08 |
| 100 - 248 | R 58.725 | R 117.45 |
| 250 - 998 | R 56.375 | R 112.75 |
| 1000 + | R 54.12 | R 108.24 |
*price indicative
- RS stock no.:
- 273-2822
- Mfr. Part No.:
- IST026N10NM5AUMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 248A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | ISA | |
| Package Type | sTOLL | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 2.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 89nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 7.2mm | |
| Standards/Approvals | RoHS | |
| Width | 6.9 mm | |
| Height | 2.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 248A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series ISA | ||
Package Type sTOLL | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 2.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 89nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 7.2mm | ||
Standards/Approvals RoHS | ||
Width 6.9 mm | ||
Height 2.4mm | ||
Automotive Standard No | ||
The Infineon MOSFET is a N channel MOSFET and optimized for low voltage motor drives application and for battery powered applications. This MOSFET is qualified according to JEDEC for industrial applications.
RoHS compliant
Pb free lead plating
100 percent avalanche tested
Enables automated optical solder inspection
Related links
- Infineon ISA Type N-Channel MOSFET 100 V Enhancement, 5-Pin sTOLL IST026N10NM5AUMA1
- Infineon IST Type N-Channel Power Transistor 60 V Enhancement, 5-Pin sTOLL
- Infineon IST Type N-Channel Power Transistor 60 V Enhancement, 5-Pin sTOLL IST011N06NM5AUMA1
- Infineon ISA Type N 7.9 A 8-Pin PG-DSO-8 ISA250300C04LMDSXTMA1
- Infineon ISA Type N 9.6 A 8-Pin PG-DSO-8 ISA170230C04LMDSXTMA1
- Infineon ISA Type N 10.2 A 8-Pin PG-DSO-8 ISA150233C03LMDSXTMA
- Infineon ISA Type P 8.4 A 3-Pin PG-TO252-3 ISA220280C03LMDSXTMA1
- DiodesZetex DMTH10H2M5STLW Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerDI1012 DMTH10H2M5STLW-13