Vishay SIHH Type N-Channel MOSFET, 30 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH085N60EF-T1GE3

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R 200,57

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R 230,66

(inc. VAT)

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1 - 49R 200.57
50 - 99R 195.56
100 - 249R 189.69
250 +R 182.10

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Packaging Options:
RS stock no.:
268-8301
Mfr. Part No.:
SIHH085N60EF-T1GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

650V

Package Type

PowerPAK 8 x 8

Series

SIHH

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.085Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

63nC

Maximum Power Dissipation Pd

184W

Maximum Gate Source Voltage Vgs

±30 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

8mm

Automotive Standard

No

COO (Country of Origin):
TW
The Vishay EF series power MOSFET with fast body diode and 4 generation E series technology which has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correct

Low effective capacitance

Avalanche energy rated

Low figure of merit

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