Vishay SIHG Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-247AC SIHG150N60E-GE3
- RS stock no.:
- 268-8299
- Mfr. Part No.:
- SIHG150N60E-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 219,28
(exc. VAT)
R 252,18
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 500 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 109.64 | R 219.28 |
| 10 - 98 | R 106.90 | R 213.80 |
| 100 - 498 | R 103.695 | R 207.39 |
| 500 - 998 | R 99.545 | R 199.09 |
| 1000 + | R 95.565 | R 191.13 |
*price indicative
- RS stock no.:
- 268-8299
- Mfr. Part No.:
- SIHG150N60E-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SIHG | |
| Package Type | TO-247AC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.158Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 179W | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 15.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SIHG | ||
Package Type TO-247AC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.158Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 179W | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 15.7mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay E series power MOSFET which has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supplies.
Low effective capacitance
Avalanche energy rated
Low figure of merit
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