Vishay SIHB Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-263 SIHB6N80AE-GE3

Image representative of range

Bulk discount available

Subtotal (1 pack of 5 units)*

R 165,43

(exc. VAT)

R 190,245

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 1,000 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
5 - 5R 33.086R 165.43
10 - 20R 32.258R 161.29
25 - 95R 31.29R 156.45
100 - 495R 30.038R 150.19
500 +R 28.836R 144.18

*price indicative

Packaging Options:
RS stock no.:
268-8295
Mfr. Part No.:
SIHB6N80AE-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

850V

Package Type

TO-263

Series

SIHB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.95Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

62.5W

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

10.67mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay E series power MOSFET has low switching and conduction losses, it is used in applications such as switch mode power supplies, server power supplies, and power factor correction power supplies. It has integrated zener diode for ESD protection.

Low effective capacitance

Avalanche energy rated

Low figure of merit

Related links