Vishay SIHB Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-263 SIHB6N80AE-GE3
- RS stock no.:
- 268-8295
- Mfr. Part No.:
- SIHB6N80AE-GE3
- Manufacturer:
- Vishay
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- RS stock no.:
- 268-8295
- Mfr. Part No.:
- SIHB6N80AE-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Package Type | TO-263 | |
| Series | SIHB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.95Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 62.5W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 850V | ||
Package Type TO-263 | ||
Series SIHB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.95Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 62.5W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay E series power MOSFET has low switching and conduction losses, it is used in applications such as switch mode power supplies, server power supplies, and power factor correction power supplies. It has integrated zener diode for ESD protection.
Low effective capacitance
Avalanche energy rated
Low figure of merit
Related links
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