Vishay SIHB Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-263 SIHB085N60EF-GE3
- RS stock no.:
- 268-8293
- Mfr. Part No.:
- SIHB085N60EF-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 332,22
(exc. VAT)
R 382,06
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 1,000 unit(s) shipping from 07 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 166.11 | R 332.22 |
| 10 - 18 | R 161.955 | R 323.91 |
| 20 - 98 | R 157.095 | R 314.19 |
| 100 - 498 | R 150.81 | R 301.62 |
| 500 + | R 144.78 | R 289.56 |
*price indicative
- RS stock no.:
- 268-8293
- Mfr. Part No.:
- SIHB085N60EF-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SIHB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.084Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 184W | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SIHB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.084Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 184W | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay EF series power MOSFET with fast body diode and 4 generation E series technology. It has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correctio
Low effective capacitance
Avalanche energy rated
Low figure of merit
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