ROHM RF4P060BG Type N-Channel MOSFET, 6 A, 100 V Enhancement, 8-Pin HUML2020L8 RF4P060BGTCR

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Subtotal (1 pack of 10 units)*

R 71,71

(exc. VAT)

R 82,47

(inc. VAT)

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  • 3,000 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
10 - 40R 7.171R 71.71
50 - 90R 6.992R 69.92
100 - 240R 6.782R 67.82
250 - 990R 6.511R 65.11
1000 +R 6.251R 62.51

*price indicative

Packaging Options:
RS stock no.:
266-3857
Mfr. Part No.:
RF4P060BGTCR
Manufacturer:
ROHM
Find similar products by selecting one or more attributes.
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Brand

ROHM

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

100V

Series

RF4P060BG

Package Type

HUML2020L8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

53mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

6.7nC

Maximum Power Dissipation Pd

2W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The ROHM power MOSFET with low-on resistance and high power small mould package, suitable for switching.

Pb free plating

RoHS compliant

Halogen free

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