ROHM R6055VNX N-Channel MOSFET, 23 A, 600 V Enhancement, 3-Pin TO-220
- RS stock no.:
- 265-5420P
- Mfr. Part No.:
- R6055VNXC7G
- Manufacturer:
- ROHM
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R 3 649,00
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R 4 196,50
(inc. VAT)
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- 947 unit(s) ready to ship from another location
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Units | Per unit | Saving |
|---|---|---|
| 50 - 99 | R 72.98 | - |
| 100 - 249 | R 70.79 | R 219,00 |
| 250 - 499 | R 67.96 | R 1 255,00 |
| 500 + | R 65.24 | R 3 870,00 |
*price indicative
- RS stock no.:
- 265-5420P
- Mfr. Part No.:
- R6055VNXC7G
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | R6055VNX | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.071Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 100W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Pb-Free Plating, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series R6055VNX | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.071Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 100W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Pb-Free Plating, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ROHM power MOSFET with a low on resistance and high power package which is suitable for switching circuits, single cell battery applications and mobile applications.
Fast reverse recovery time (trr)
Low on resistance
Fast switching speed
Drive circuits can be simple