Microchip VP2110 Type P-Channel MOSFET, -120 mA, 100 V Enhancement, 3-Pin SOT-23 VP2110K1-G

RS stock no.:: 264-8951
Mfr. Part No.:: VP2110K1-G
Manufacturer:: Microchip

Microchip VP2110 Type P-Channel MOSFET, -120 mA, 100 V Enhancement, 3-Pin SOT-23 VP2110K1-G

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Subtotal (1 pack of 10 units)*

R 141,49

(exc. VAT)

R 162,71

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

1,840 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 - 40	R 14.149	R 141.49
50 - 90	R 13.795	R 137.95
100 - 240	R 13.381	R 133.81
250 - 990	R 12.846	R 128.46
1000 +	R 12.332	R 123.32

*price indicative

RS stock no.:: 264-8951
Mfr. Part No.:: VP2110K1-G
Manufacturer:: Microchip

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Microchip
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	-120mA
	Maximum Drain Source Voltage Vds	100V
	Series	VP2110
	Package Type	SOT-23
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	12Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	0.36W
	Maximum Gate Source Voltage Vgs	±20 V
	Forward Voltage Vf	2V
	Maximum Operating Temperature	150°C
	Width	1.3 mm
	Length	2.9mm
	Height	1.12mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Microchip
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id -120mA
	Maximum Drain Source Voltage Vds 100V
	Series VP2110
	Package Type SOT-23
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 12Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 0.36W
	Maximum Gate Source Voltage Vgs ±20 V
	Forward Voltage Vf 2V
	Maximum Operating Temperature 150°C
	Width 1.3 mm
	Length 2.9mm
	Height 1.12mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - VP2110K1-G

The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low CISS and fast switching speeds

Excellent thermal stability

Integral source-to-drain diode

High input impedance and high gain

Microchip VP2110 Type P-Channel MOSFET, -120 mA, 100 V Enhancement, 3-Pin SOT-23 VP2110K1-G

FREE delivery for orders over R 1,500.00

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