ROHM RD3H160SP Type P-Channel MOSFET, 16 A, 45 V Enhancement, 3-Pin TO-252 RD3H160SPTL1
- RS stock no.:
- 264-3807
- Mfr. Part No.:
- RD3H160SPTL1
- Manufacturer:
- ROHM
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 81,71
(exc. VAT)
R 93,965
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,215 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 16.342 | R 81.71 |
| 50 - 95 | R 15.934 | R 79.67 |
| 100 - 245 | R 15.456 | R 77.28 |
| 250 - 995 | R 14.838 | R 74.19 |
| 1000 + | R 14.244 | R 71.22 |
*price indicative
- RS stock no.:
- 264-3807
- Mfr. Part No.:
- RD3H160SPTL1
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 45V | |
| Package Type | TO-252 | |
| Series | RD3H160SP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 20W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Pb-free lead plating, RoHS | |
| Height | 2.3mm | |
| Length | 6.8mm | |
| Width | 6.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 45V | ||
Package Type TO-252 | ||
Series RD3H160SP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 20W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Pb-free lead plating, RoHS | ||
Height 2.3mm | ||
Length 6.8mm | ||
Width 6.4 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ROHM power MOSFET with low on resistance, suitable for switching, it is drive circuits can be simple and Pb-free plating and RoHS compliant.
Fast switching speed
Parallel use is easy
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