ROHM QH8MA3 Type N, Type P-Channel MOSFET, 7 A, 30 V Enhancement, 8-Pin TSMT QH8MA3TCR
- RS stock no.:
- 264-3774
- Mfr. Part No.:
- QH8MA3TCR
- Manufacturer:
- ROHM
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 120,41
(exc. VAT)
R 138,47
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,870 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 12.041 | R 120.41 |
| 50 - 90 | R 11.74 | R 117.40 |
| 100 - 240 | R 11.388 | R 113.88 |
| 250 - 990 | R 10.932 | R 109.32 |
| 1000 + | R 10.495 | R 104.95 |
*price indicative
- RS stock no.:
- 264-3774
- Mfr. Part No.:
- QH8MA3TCR
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N, Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | QH8MA3 | |
| Package Type | TSMT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 7.2nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, Pb-free lead plating | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N, Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series QH8MA3 | ||
Package Type TSMT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 7.2nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, Pb-free lead plating | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The ROHM middle power MOSFET is suitable for switching power supply, it is small surface mount package and Pb-free lead plating and RoHS compliant.
Low on resistance
Halogen free
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