Infineon HEXFET Type N-Channel MOSFET, 129 A, 135 V Enhancement, 3-Pin TO-220 IRF135B203

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Subtotal (1 pack of 2 units)*

R 43,25

(exc. VAT)

R 49,738

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 21.625R 43.25
10 - 18R 21.085R 42.17
20 - 28R 20.45R 40.90
30 - 38R 19.63R 39.26
40 +R 18.845R 37.69

*price indicative

Packaging Options:
RS stock no.:
260-5936
Mfr. Part No.:
IRF135B203
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

129A

Maximum Drain Source Voltage Vds

135V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through hole packages with industry standard footprints for ease of design.

Optimized for broadest availability from distribution partners

Industry standard through hole power package

High current carrying capability package

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