Infineon IPT Type N-Channel MOSFET, 122 A, 150 V, 16-Pin HDSOP IPTC063N15NM5ATMA1

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R 101,71

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R 116,97

(inc. VAT)

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1 - 9R 101.71
10 - 99R 99.17
100 - 249R 96.19
250 - 499R 92.34
500 +R 88.65

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Packaging Options:
RS stock no.:
259-2736
Mfr. Part No.:
IPTC063N15NM5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

122A

Maximum Drain Source Voltage Vds

150V

Series

IPT

Package Type

HDSOP

Pin Count

16

Maximum Drain Source Resistance Rds

6.3mΩ

Maximum Power Dissipation Pd

214W

Typical Gate Charge Qg @ Vgs

50nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.84V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

10.1mm

Width

10.3 mm

Height

2.35mm

Standards/Approvals

RoHS, IEC 61249-2-21

Automotive Standard

No

The Infineon OptiMOS 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter. With a broad package portfolio, this family of power MOSFETs offers the industry’s lowest RDS(on). One of the biggest contributors to this industry leading figure of merit (FOM) is the low on-state resistance with a value as low as 2.7 mΩ in the SuperSO8 package, providing the highest level of power density and efficiency.

N-channel, normal level

Very low on-resistance RDS(on)

Superior thermal resistance

100% avalanche tested

Pb-free lead plating; RoHS compliant

Halogen-free according to IEC61249-2-26

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